During normal operation, the substrate of a P-channel enhanced MOS transistor must be connected to the source, and the voltage Vds at the drain center should be negative to ensure that the PN junction between the two P regions and the substrate is reverse biased. At the same time, in order to form a conductive channel near the top surface of the substrate, the voltage Vgs between the gate and the source should also be negative.
Categories：Product knowledge Date：2024-11-14 Hits：243 View »
In the field of electronic applications, it is essential to protect against electrostatic discharge, transient voltage, EFT, and surge voltage immunity to ensure the safety and reliability of electronic circuits. In the field of protection, there are two types of protective components.
Categories：Product knowledge Date：2024-11-14 Hits：260 View »
1. Circuit design issues; 2. The frequency is too high; 3. Insufficient heat dissipation design; 4. Incorrect selection of MOS transistor
Categories：Product knowledge Date：2024-11-14 Hits：245 View »
The relationship between the absorption power (peak value) of transient voltage and the pulse width of transient voltage is only given in the manual as the absorption power (peak value) at a specific pulse width. However, the pulse width in the actual circuit is unpredictable and needs to be estimated in advance. Wide pulses should be downgraded for use.
Categories：Product knowledge Date：2024-11-14 Hits：242 View »
Static phase shifter is connected in series in the rotor circuit of a motor, which changes the phase relationship between the rotor current and rotor voltage, and then changes the phase relationship between the stator current and voltage of the motor, in order to improve the power factor and efficiency of the motor itself, increase the motor overload capacity, reduce the stator current of the motor, and reduce the motor's own losses.
Categories：Product knowledge Date：2024-11-14 Hits：248 View »
Controllable silicon and IGBT are two commonly used power semiconductor devices in the field of modern power electronics.
Categories：Product knowledge Date：2024-11-14 Hits：314 View »
In practical applications, the frequency of thyristor switching is mainly affected by the following factors
Categories：Product knowledge Date：2024-11-14 Hits：340 View »
During operation, no voltage is applied between the gate and source. Unlike enhanced MOS transistors, there is a conductive channel between the drain and source. Therefore, as long as a forward voltage is applied between the drain and source, a drain current will be generated.
Categories：Product knowledge Date：2024-11-14 Hits：248 View »
When there is no voltage applied between the gate and source during operation, the PN junction between the drain and source is reversed, so there is no conductive channel. Even if a voltage is applied between the drain and source, the conductive channel is closed and no current flows through.
Categories：Product knowledge Date：2024-11-14 Hits：252 View »
When conducting, the driving circuit should be able to provide sufficient charging current to quickly raise the voltage between the MOSFET gate and source to the required value, ensuring that the switch tube can be quickly turned on and there is no high-frequency oscillation of the rising edge.
Categories：Product knowledge Date：2024-11-14 Hits：260 View »
